Devices without current crowding effect at the finger's ends

Details Devices without current crowding effect at the finger's ends Devices without current crowding effect at the finger's ends

2007-02-28

2009-08-25

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S360000, C257S361000, C257S362000, C257SE27063, C257SE29015, C257SE29063, C257SE29281, C361S056000, C361S057000

Reexamination Certificate

active

07579658

ABSTRACT:
ESD protection devices without current crowding effect at the finger's ends. It is applied under MM ESD stress in sub-quarter-micron CMOS technology. The ESD discharging current path in the NMOS or PMOS device structure is changed by the proposed new structures, therefore the MM ESD level of the NMOS and PMOS can be significantly improved. In this invention, 6 kinds of new structures are provided. The current crowding problem can be successfully solved, and have a higher MM ESD robustness. Moreover, these novel devices will not degrade the HBM ESD level and are widely used in ESD protection circuits.

REFERENCES:
patent: 6246080 (2001-06-01), Takahashi et al.
patent: 6587320 (2003-07-01), Russ et al.
patent: 6621133 (2003-09-01), Chen et al.
patent: 6864536 (2005-03-01), Lin et al.
patent: 2002/0175377 (2002-11-01), Lin
patent: 2003/0230780 (2003-12-01), Cai et al.

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