Devices with different electrical gate dielectric...

Details Devices with different electrical gate dielectric... Devices with different electrical gate dielectric...

2006-09-26

2006-09-26

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S412000, C257S903000

Reexamination Certificate

active

07112857

ABSTRACT:
An integrated circuit is disclosed having one or more devices having substantially similar physical gate electric thicknesses but different electrical gate electric thicknesses for accommodating various operation needs. One or more devices are manufactured with a same mask set using multiple doping processes to generate substantially similar physical gate dielectric thicknesses, but with different electrical gate dielectric thicknesses. The device undergoing multiple doping processes have different dopant concentrations, thereby providing different electrical characteristics such as the threshold voltages.

REFERENCES:
patent: 5637903 (1997-06-01), Liao et al.
patent: 5703392 (1997-12-01), Guo
patent: 6100568 (2000-08-01), Lage
patent: 6348719 (2002-02-01), Chapman
patent: 6492690 (2002-12-01), Ueno et al.
patent: 6528897 (2003-03-01), Kuwazawa

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