Devices having reversible resistivity-switching metal oxide...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000

Reexamination Certificate

active

07816659

ABSTRACT:
A layer of resistivity-switching metal oxide or nitride can attain at least two stable resistivity states. Such a layer may be used in a state-change element in a nonvolatile memory cell, storing its data state, for example a “0” or a “1”, in this resistivity state. Including additional metal atoms in a layer of such a resistivity-switching metal oxide or nitride compound decreases the current required to cause switching between resistivity states, reducing power requirements for an array of memory cells storing data in the resistivity state of such a layer. In various embodiments a memory cell may include a layer of resistivity-switching metal oxide or nitride compound with added metal formed in series with another element, such as a diode or a transistor.

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