Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-11-23
2010-10-19
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000
Reexamination Certificate
active
07816659
ABSTRACT:
A layer of resistivity-switching metal oxide or nitride can attain at least two stable resistivity states. Such a layer may be used in a state-change element in a nonvolatile memory cell, storing its data state, for example a “0” or a “1”, in this resistivity state. Including additional metal atoms in a layer of such a resistivity-switching metal oxide or nitride compound decreases the current required to cause switching between resistivity states, reducing power requirements for an array of memory cells storing data in the resistivity state of such a layer. In various embodiments a memory cell may include a layer of resistivity-switching metal oxide or nitride compound with added metal formed in series with another element, such as a diode or a transistor.
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Herner S. Brad
Kumar Tanmay
Dugan & Dugan PC
Pham Thanh V
SanDisk 3D LLC
Valentine Jami M
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