Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2007-12-04
2009-11-17
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C977S724000, C977S734000, C977S742000
Reexamination Certificate
active
07619291
ABSTRACT:
New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap.
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Jaiprakash Venkatachalam C.
Rueckes Thomas
Segal Brent M.
Ward Jonathan W.
Menz Douglas M
Nantero Inc.
Wilmer Cutler Pickering Hale and Dorr LLP
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