Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-14
2011-06-14
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29257
Reexamination Certificate
active
07960783
ABSTRACT:
An edge termination structure includes a final dielectric trench containing permanent charge. The final dielectric trench is surrounded by first conductivity type semiconductor material (doped by lateral outdiffusion from the trenches), which in turn is laterally surrounded by second conductivity type semiconductor material.
REFERENCES:
patent: 5282018 (1994-01-01), Hiraki et al.
patent: 5637898 (1997-06-01), Baliga
patent: 5864159 (1999-01-01), Takahashi
patent: 5973359 (1999-10-01), Kobayashi
patent: 5998833 (1999-12-01), Baliga
patent: 6069372 (2000-05-01), Uenishi
patent: 6114727 (2000-09-01), Ogura et al.
patent: 6191447 (2001-02-01), Baliga
patent: 6251730 (2001-06-01), Luo
patent: 6388286 (2002-05-01), Baliga
patent: 6525373 (2003-02-01), Kim
patent: 6541820 (2003-04-01), Bol
patent: 6649975 (2003-11-01), Baliga
patent: 6686244 (2004-02-01), Blanchard
patent: 6710403 (2004-03-01), Sapp
patent: 6803627 (2004-10-01), Pfirsch
patent: 2001/0041407 (2001-11-01), Brown
patent: 2002/0197786 (2002-12-01), Cho et al.
patent: 2003/0203576 (2003-10-01), Kitada et al.
patent: 2004/0121572 (2004-06-01), Darwish et al.
patent: 2005/0176204 (2005-08-01), Langdo et al.
patent: 2005/0285182 (2005-12-01), Schuler
patent: 2006/0060916 (2006-03-01), Girdhar et al.
patent: 2008/0023763 (2008-01-01), Blanchard
patent: 2008/0164516 (2008-07-01), Darwish
patent: 2008/0191307 (2008-08-01), Darwish
J. T. Watt, B. J. Fishbein & J. D. Plummer; Low-Temperature NMOS Technology with Cesium-Implanted Load Devices; IEEE Trans.Electron Devices, vol. 34, # 1, Jan. 1987; p. 28-38.
J.T.Watt,B.J.Fishbein & J.D.Plummer;Characterization of Surface Mobility in MOS Structures Containing Interfacial Cesium Ions;IEEE Trans.Electron Devices,V36,Jan. 1989; p. 96-100.
J.R.Pfiester, J.R.Alvis & C.D.Gunderson; Gain-Enhanced LDD NMOS Device Using Cesium Implantation; IEEE Trans.Electron Devices, V39, #6, Jun. 1992; p. 1469-1476.
PCT/US09/54739 ISR/WO, Apr. 22, 2010, Mohamed N. Darwish.
Darwish Mohammed N.
Paul Amit
Groover III Robert O.
Maxpower Semiconductor Inc.
Prenty Mark
Storm LLP
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