Devices and systems having at least one dam structure

Details Devices and systems having at least one dam structure Devices and systems having at least one dam structure

2007-07-23

2010-11-16

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S667000, C257S276000, C257S502000, C257S621000

Reexamination Certificate

active

07833894

ABSTRACT:
A method for forming through-wafer interconnects (TWI) in a substrate. Blind holes are formed from a surface, sidewalls thereof are passivated and coated with a conductive material. A vent hole is then formed from the opposite surface to intersect the blind hole. The blind hole is solder filled, followed by back thinning of the vent hole portion of the wafer to a final substrate thickness to expose the solder and conductive material at both the active surface and the thinned back side. A metal layer having a glass transition temperature greater than that of the solder may be plated to form a dam structure covering one or both ends of the TWI. Intermediate structures of semiconductor devices, semiconductor devices and systems are also disclosed.

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