Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-20
2010-06-29
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257S296000, C257S306000, C257S311000, C257SE21388, C257SE21388
Reexamination Certificate
active
07745865
ABSTRACT:
Devices and methods for preventing capacitor leakage caused by sharp tip. The formation of sharp tip is avoided by a thicker bottom electrode which fully fills a micro-trench that induces formation of the sharp tip. Alternatively, formation of the sharp tip can be avoided by recessing the contact plug to substantially eliminate the micro-trench.
REFERENCES:
patent: 5597756 (1997-01-01), Fazan et al.
patent: 6274424 (2001-08-01), White, Jr. et al.
patent: 6294426 (2001-09-01), Tu et al.
patent: 6391735 (2002-05-01), Durcan et al.
patent: 6468858 (2002-10-01), Lou
patent: 6677217 (2004-01-01), Joo et al.
patent: 6815752 (2004-11-01), Kitamura
patent: 2002/0142539 (2002-10-01), Tu et al.
patent: 2002/0192904 (2002-12-01), Yang
patent: 2003/0013252 (2003-01-01), Hwang et al.
patent: 2003/0077860 (2003-04-01), Tu
patent: 2004/0232462 (2004-11-01), Takeuchi
patent: 2004/0248361 (2004-12-01), Oh et al.
patent: 2005/0051824 (2005-03-01), Iizuka et al.
Birch & Stewart Kolasch & Birch, LLP
Louie Wai-Sing
Montalvo Eva Y.
Taiwan Semiconductor Manufacturing Co. Ltd.
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