Devices and methods for detecting current leakage between...

Details Devices and methods for detecting current leakage between... Devices and methods for detecting current leakage between...

2007-01-03

2008-10-28

Nguyen, Vincent Q (Department: 2831)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

For fault location

C324S713000, C365S149000

Reexamination Certificate

active

07443171

ABSTRACT:
A test device for detecting current leakage between deep trench capacitors in DRAM devices. The test device is disposed in a scribe line region of a wafer. In the test device, a first trench capacitor pair has a first deep trench capacitor and a second deep trench capacitor connected in parallel. A first transistor has a first terminal electrically coupled to the first deep trench capacitor and a control terminal electrically coupled to a first word line. A second transistor has a first terminal electrically coupled to the second deep trench capacitor and a control terminal electrically coupled to a second word line. First and second bit lines are electrically coupled to the first and second transistors respectively. The first and second bit lines are separated and the first and second word lines are perpendicular to the bit line regions.

REFERENCES:
patent: 6339228 (2002-01-01), Iyer et al.
patent: 6617180 (2003-09-01), Wang
patent: 2002/0118035 (2002-08-01), Yang et al.
patent: 2004/0017710 (2004-01-01), Chang et al.
patent: 2004/0061110 (2004-04-01), Felber et al.
patent: 2004/0061112 (2004-04-01), Felber et al.

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