Devices and methods for constructing electrically...

Details Devices and methods for constructing electrically... Devices and methods for constructing electrically...

2006-04-26

2009-08-18

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S538000, C438S132000, C438S600000, C365S094000

Reexamination Certificate

active

07576407

ABSTRACT:
Electrically programmable integrated fuses are provided for low power applications. Integrated fuse devices have stacked structures with a polysilicon layer and a conductive layer formed on the polysilicon layer. The integrated fuses have structural features that enable the fuses to be reliably and efficiently programmed using low programming currents/voltages, while achieving consistency in fusing locations. For example, programming reliability and consistency is achieved by forming the conductive layers with varied thickness and forming the polysilicon layers with varied doping profiles, to provide more precise localized regions in which fusing events readily occur.

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Korean Office Action dated Feb. 26, 2008 for corresponding Korean Appln. No. 10-2007-0040031.

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