Devices and methods for a threshold voltage difference...

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Reexamination Certificate

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C365S206000, C365S207000, C365S210120

Reexamination Certificate

active

07826293

ABSTRACT:
A voltage compensated sense amplifier includes a pair of digit line nodes respectively coupled to a pair of transistors. A first pair of switches are adapted to cross-couple the gates of the transistors to the respective digit line node and a second pair of switches are adapted to couple the gates of the transistors to a voltage supply. The first and second pair of switches are coupled to respective gates of the transistors independent of the pair of transistors being respectively coupled to the digit line nodes.

REFERENCES:
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patent: 5650970 (1997-07-01), Kai
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patent: 6181621 (2001-01-01), Lovett
patent: 6518827 (2003-02-01), Fifield et al.
patent: 6566914 (2003-05-01), Bruneau et al.
patent: 6728152 (2004-04-01), Van De Graaff
patent: 6754121 (2004-06-01), Worley
Shunichi Suzuki and Masaki Hirata., “Threshold Difference Compensated Sense Amplifier”, IEEE Journal of Solid-State Circuits, vol. SC-14, No. 6 Dec. 1979, pp. 1066-1070.
Yohji Watanabe et al. “Offset Compensating Bit-Line Sensing Scheme for High Density DRAMS's”, IEEE Journal of Solid-State Circuits, vol. 29, No. 1, Jan. 1994, pp. 9-13.
Sanghoon Hong et al. “Low-Voltage DRAM Sensing Scheme With Offset-Cancellation Sense Amplifier”, IEEE Journal of Solid-State Circuits, vol. 37, No. 10, Oct. 2002, pp. 1356-1360.

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