Device with integrated capacitance structure

Details Device with integrated capacitance structure Device with integrated capacitance structure

2007-05-29

2007-05-29

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257S534000

Reexamination Certificate

active

11238114

ABSTRACT:
The present invention relates to a device with integrated capacitance structure has at least one first and an adjacent second rewiring plane, each of which comprises at least one first partial structure and a second partial structure, which is different from the first partial structure, the second partial structure in each case substantially surrounding the first partial structure, and the first partial structure of the first rewiring plane being electrically connected to the second partial structure of the second rewiring plane and the second partial structure of the first rewiring plane being electrically connected to the first partial structure of the second rewiring plane and forming different poles of the capacitance structure.

REFERENCES:
patent: 5583359 (1996-12-01), Ng
patent: 6208500 (2001-03-01), Alexander
patent: 6411492 (2002-06-01), Kar-Roy
patent: 6743671 (2004-06-01), Hu et al.
patent: 10217565 (2003-11-01), None

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