Device with gates configured in loop structures

Details Device with gates configured in loop structures Device with gates configured in loop structures

2007-08-17

2010-02-09

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27060, C347S059000

Reexamination Certificate

active

07659589

ABSTRACT:
A device includes a substrate, a first gate, a second gate, and a third gate. The substrate has a first active region and a second active region. The first gate is configured in a first loop structure around the first active region. The second gate is configured in a second loop structure around the second active region, and the third gate is configured in a third loop structure around the first gate and the second gate.

REFERENCES:
patent: 4240093 (1980-12-01), Dingwall
patent: 5057885 (1991-10-01), Matsumoto et al.
patent: 6174037 (2001-01-01), Donahue et al.
patent: 2002/0093551 (2002-07-01), Axtell et al.
patent: 2002/0130371 (2002-09-01), Bryant et al.
patent: 2003/0103106 (2003-06-01), Silverbrook

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