Device transfer method and panel

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated

Reexamination Certificate

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C257SE23124

Reexamination Certificate

active

10746495

ABSTRACT:
A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

REFERENCES:
patent: 5177405 (1993-01-01), Kusuda et al.
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5258320 (1993-11-01), Zavracky et al.
patent: 5438241 (1995-08-01), Zavracky et al.
patent: 5593917 (1997-01-01), Nuyen
patent: 5739800 (1998-04-01), Lebby et al.
patent: 5766695 (1998-06-01), Nguyen et al.
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 5981977 (1999-11-01), Furukawa et al.
patent: 6113685 (2000-09-01), Wang et al.
patent: 6117704 (2000-09-01), Yamaguchi et al.
patent: 6274518 (2001-08-01), Yuri et al.
patent: 6287891 (2001-09-01), Sayyah
patent: 6303405 (2001-10-01), Ysoshida et al.
patent: 6403985 (2002-06-01), Fan et al.
patent: 6413838 (2002-07-01), Itoh
patent: 6420242 (2002-07-01), Cheung et al.
patent: 6425971 (2002-07-01), Siverbrrok
patent: 6559905 (2003-05-01), Akiyama
patent: 6589814 (2003-07-01), Mostafazadeh et al.
patent: 6613610 (2003-09-01), Iwafuchi et al.
patent: 6636185 (2003-10-01), Spitzer et al.
patent: 6656819 (2003-12-01), Sugino et al.
patent: 6683416 (2004-01-01), Oohata et al.
patent: 2002/0048905 (2002-04-01), Ikegami et al.
patent: 2002/0078559 (2002-06-01), Buchalter et al.
patent: 2002/0088985 (2002-07-01), Komoto et al.
patent: 2002/0113284 (2002-08-01), Flannery
patent: 2002/0115265 (2002-08-01), Iwafuchi et al.
patent: 2002/0137342 (2002-09-01), Ishida et al.
patent: 2003/0087476 (2003-05-01), Oohata et al.
patent: 0 905 673 (1999-03-01), None
patent: 56-017385 (1981-02-01), None
patent: 56-092577 (1981-07-01), None
patent: 57-045583 (1982-03-01), None
patent: 57-052071 (1982-03-01), None
patent: 57-052072 (1982-03-01), None
patent: 57-052073 (1982-03-01), None
patent: 58-050577 (1983-03-01), None
patent: 60-181778 (1985-09-01), None
patent: 61-156780 (1986-07-01), None
patent: 63-188938 (1988-08-01), None
patent: 02-114196 (1990-04-01), None
patent: 02-263668 (1990-10-01), None
patent: 03-035568 (1991-02-01), None
patent: 04-010671 (1992-01-01), None
patent: 04-247486 (1992-09-01), None
patent: 05-013659 (1993-01-01), None
patent: 05-290669 (1993-11-01), None
patent: 05-315643 (1993-11-01), None
patent: 05-315646 (1993-11-01), None
patent: 06-045648 (1994-02-01), None
patent: 06-067044 (1994-03-01), None
patent: 06-504139 (1994-05-01), None
patent: 07-110660 (1995-04-01), None
patent: 07-199829 (1995-04-01), None
patent: 07-263754 (1995-10-01), None
patent: 07-321469 (1995-12-01), None
patent: 08-008217 (1996-01-01), None
patent: 08-107293 (1996-04-01), None
patent: 08-264841 (1996-10-01), None
patent: 09-129974 (1997-05-01), None
patent: 09-293904 (1997-11-01), None
patent: 10-070151 (1998-03-01), None
patent: 10-125929 (1998-05-01), None
patent: 10-163536 (1998-06-01), None
patent: 10-173305 (1998-06-01), None
patent: 10-223833 (1998-08-01), None
patent: 10-256694 (1998-09-01), None
patent: 10-270801 (1998-10-01), None
patent: 10-305620 (1998-11-01), None
patent: 10-312971 (1998-11-01), None
patent: 11-008338 (1999-01-01), None
patent: 11-26883 (1999-01-01), None
patent: 11-045977 (1999-02-01), None
patent: 11-075019 (1999-03-01), None
patent: 11-126037 (1999-05-01), None
patent: 11-142878 (1999-05-01), None
patent: 11-177138 (1999-07-01), None
patent: 11-219146 (1999-08-01), None
patent: 11-251253 (1999-09-01), None
patent: 11-312840 (1999-11-01), None
patent: 11-514136 (1999-11-01), None
patent: 11-346004 (1999-12-01), None
patent: 2000-068593 (2000-03-01), None
patent: 2000-089693 (2000-03-01), None
patent: 2000-183451 (2000-06-01), None
patent: 2000-223417 (2000-08-01), None
patent: 2000-332343 (2000-11-01), None
patent: 2001-085738 (2001-03-01), None
patent: 2001-217503 (2001-08-01), None
patent: 2002-185660 (2002-12-01), None
patent: WO 95-05623 (1995-02-01), None
patent: WO 97-44612 (1997-11-01), None
Zheleva et al.,Pendeo/epitaxy—a new approach for lateral growth of gallium nitride structures, MRS Internet J. Nitride Semicond. Res. 4S1, G3.38 (1999).
Kapolnek et al.,Spatial control of InGaN luminescence by MOCVD selective epitaxy, Journal of Crystal Growth, 189/190 (1998) pp. 83/86.
Applied Physics Letters, vol. 76, No. 22, May 29, 2000, “Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature”, Tachibani et al, pp. 3212/3214.
Kelly et al., “Optical patterning of GaN films” Appl. Phy. Lett., vol. 69, Sep. 16, 1996.
Wong et al., “Damage free separation of GaN thin films from sapphire substrate”, Appl. Phys. Lett., vol. 72, Feb. 2, 1998.

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