Device transfer method

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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Details

C216S059000, C216S060000, C219S121600, C219S121610, C219S121680

Reexamination Certificate

active

07744770

ABSTRACT:
A device transfer method is provided. The device transfer method is disclosed by which, when a laser ablation technique is used to selectively exfoliate devices arranged on a substrate, the energy is transmitted efficiently to transfer the devices with a high degree of accuracy and at a high speed. A laser irradiation apparatus is used which includes a laser light source for generating a laser beam, a reflection section for reflecting the laser beam toward a required direction, and a control section for controlling whether or not the laser beam is to be irradiated in an interlocking relationship with the reflection section. The laser beam is selectively irradiated on a plurality of devices arranged on a transfer source substrate to cause laser ablation such that the selected devices are transferred to a transfer destination substrate by the selective laser ablation.

REFERENCES:
patent: 4420760 (1983-12-01), Phillips
patent: 5461601 (1995-10-01), Shinada et al.
patent: 5472550 (1995-12-01), Periasamy
patent: 5978189 (1999-11-01), Habu
patent: 6200405 (2001-03-01), Nakazawa et al.
patent: 7193759 (2007-03-01), Takeuchi et al.
patent: 2003/0087476 (2003-05-01), Oohata et al.
patent: 2004/0066569 (2004-04-01), Taniguchi
patent: 2004-285171 (2004-10-01), None

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