Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2005-06-22
2010-06-29
Ahmed, Shamim (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S059000, C216S060000, C219S121600, C219S121610, C219S121680
Reexamination Certificate
active
07744770
ABSTRACT:
A device transfer method is provided. The device transfer method is disclosed by which, when a laser ablation technique is used to selectively exfoliate devices arranged on a substrate, the energy is transmitted efficiently to transfer the devices with a high degree of accuracy and at a high speed. A laser irradiation apparatus is used which includes a laser light source for generating a laser beam, a reflection section for reflecting the laser beam toward a required direction, and a control section for controlling whether or not the laser beam is to be irradiated in an interlocking relationship with the reflection section. The laser beam is selectively irradiated on a plurality of devices arranged on a transfer source substrate to cause laser ablation such that the selected devices are transferred to a transfer destination substrate by the selective laser ablation.
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Doi Masato
Oohata Toyoharu
Ahmed Shamim
K&L Gates LLP
Sony Corporation
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