Device structures including backside contacts, and methods...

Details Device structures including backside contacts, and methods... Device structures including backside contacts, and methods...

2006-08-29

2010-10-19

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S311000, C438S675000

Reexamination Certificate

active

07816231

ABSTRACT:
The present invention relates to device structures having backside contacts that extend from a back surface of a substrate through the substrate to electrically contact frontside semiconductor devices. The substrate preferably further includes one or more alignment structures located therein, each of which is sufficiently visible at the back surface of the substrate. In this manner, backside lithographic alignment can be carried out using such alignment structures to form at least one back contact opening in a patterned resist layer over the back surface of the substrate. The formed back contact opening is lithographically aligned with the front semiconductor device and can be etched to form a back contact via that extends from the back surface of the substrate onto the front semiconductor device. Filling of the back contact via with a conductive material results in a conductive back contact that electrically contacts the front semiconductor device.

REFERENCES:
patent: 6773952 (2004-08-01), Armbrust et al.
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patent: 7265402 (2007-09-01), Koyanagi
patent: 2004/0232554 (2004-11-01), Hirano et al.
patent: 2007/0275533 (2007-11-01), Vaed et al.
patent: 2007/0278619 (2007-12-01), Clevenger et al.
patent: 2008/0006850 (2008-01-01), Ribnicek et al.
patent: 05-055357 (1993-03-01), None

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