Device structure of RF LDMOS with trench type sinker

Details Device structure of RF LDMOS with trench type sinker Device structure of RF LDMOS with trench type sinker

2005-03-22

2005-03-22

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S339000, C257S491000, C257S492000

Reexamination Certificate

active

06870222

ABSTRACT:
A device structure of a LDMOSFET has trench type sinker formed using a trench process. A semiconductor layer of a first conductive type is formed within the device structure. A field area is formed in a trench structure on one side of the semiconductor layer and a gate electrode is formed on a given surface of the semiconductor layer. A channel layer of a second conductive type is formed by laterally diffusion from the field area to a width containing both sides of the gate electrode. The source area of LDMOS is electrically connected with the substrate through the sinker. By a piercing through the source area, the sinker divides the source area into two source areas. This division reduces the parasitic resistance as well as parasitic capacitance. In addition, the device structure eliminates the need for high temperature diffusion process and reduces lateral diffusion of the sinker.

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120 Watt, 2GHz, Si LDMOS RF Power Transistor For PCS Base Station Applications.
High Performance Silicon LDMOS Technology For 2GHz RF Power Amplifier Applications.

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