Device structure of ferroelectric memory and nondestructive...

Details Device structure of ferroelectric memory and nondestructive... Device structure of ferroelectric memory and nondestructive...

2007-09-04

2007-09-04

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000, C365S173000

Reexamination Certificate

active

11089365

ABSTRACT:
A method for reading a nondestructive readout type ferroelectric memory device including a process in which 1-bit data is written in a pair of a cell for storage and a cell for reference disposed in series in the ferroelectric memory device, and a process in which a response obtained when a pulse is impressed to the 1-bit data written in the pair of a cell for storage and a cell for reference is resonated by a resonant circuit with a specified resonance frequency provided at a readout side to thereby output an output signal to be nondestructively readout.

REFERENCES:
patent: 2922143 (1960-01-01), Epstein
patent: 3733590 (1973-05-01), Kaufman
patent: 5578845 (1996-11-01), Masuda et al.
patent: 6016267 (2000-01-01), Bozso et al.
patent: 05-055664 (1993-03-01), None
patent: 05-129622 (1993-05-01), None
patent: 06-275062 (1994-09-01), None

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