Device structure having enhanced surface adhesion and...

Details Device structure having enhanced surface adhesion and... Device structure having enhanced surface adhesion and...

2007-01-02

2007-01-02

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S759000

Reexamination Certificate

active

10861149

ABSTRACT:
A substrate is provided having semiconductor device structures formed in and on the substrate. The semiconductor device structures comprise conductor layers embedded in openings in dielectric layers having a dielectric constant of less than 4.5. The dielectric layer has a roughness between the dielectric and the conductor wherein the roughness of the dielectric layer divided by the thickness of a barrier layer underlying the conductor layer is 0 to 1. The integrated circuit structure is prepared for failure analysis by removing the low dielectric constant dielectric layers and exposing the conductor layers for further failure analysis by optical examination or scanning electron microscope (SEM).

REFERENCES:
patent: 5504042 (1996-04-01), Cho et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6797605 (2004-09-01), Goh et al.
patent: 2002/0004300 (2002-01-01), Plat et al.

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