Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-30
2011-10-11
Matthews, Colleen (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257SE21040, C257SE21420
Reexamination Certificate
active
08035159
ABSTRACT:
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
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Bhalla Anup
Hébert François
Lui Sik K
Tai Sung-Shan
Alpha & Omega Semiconductor Ltd.
Lin Bo-In
Matthews Colleen
Yushina Galina
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