Device speed alteration by electron-hole pair injection and...

Details Device speed alteration by electron-hole pair injection and... Device speed alteration by electron-hole pair injection and...

2005-04-19

2005-04-19

Zarneke, David (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S1540PB

Reexamination Certificate

active

06882170

ABSTRACT:
Integrated circuit and integrated circuit device diagnostic methods and apparatus in accordance with the present invention are provided. The IC is operated to produce an output marginally above a pass-fail threshold for a particular performance criteria. The IC is made to fail that criteria by inducing an electrical stress in an IC device that is of marginal design for that particular criteria. The electrical stress acts to minutely degrade the performance of the IC device driving the IC below the pass-fail threshold. When each IC device is stressed in accordance with the embodiments of the present invention, marginal IC devices are identified to enable the design to be modified. The induced electrical stress is non-destructive to the IC device and IC, which permits a repeatable diagnostic process, as well as allows for the diagnostic testing of other IC devices in the same microcircuit.

REFERENCES:
patent: 4698587 (1987-10-01), Burns et al.
patent: 4777434 (1988-10-01), Miller et al.

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