Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-11-16
1997-09-09
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438675, 438233, H01L 2176
Patent
active
056656300
ABSTRACT:
A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region.
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Ichise Toshihiko
Ishizuka Keiji
Kataoka Yuzo
Ohzu Hayao
Takahashi Hidekazu
Bowers Jr. Charles L.
Canon Kabushiki Kaisha
Whipple Matthew
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