Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-09-10
2000-06-27
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438639, 438640, 438700, 438739, H01L 214763, H01L 21311, H01L 21302
Patent
active
060806583
ABSTRACT:
A device manufacturing method prevents damage from plasma charging and vertical cross talk. The method comprises the steps of forming an insulating layer over a substrate that has a MOS device and source/drain regions already formed thereon. The insulating layer is formed by a non-plasma operation so that plasma damage is avoided. Thereafter, a conductive layer is formed over the substrate. The conductive layer is used to channel away excess charges produced during subsequent plasma operations, thereby balancing electric potential and preventing damage to the device from current flow. Subsequently, an inter-layer dielectric layer is formed over the conductive layer, and then the inter-layer dielectric layer, the conductive layer and the insulating layer are patterned to form an opening that exposes the source/drain region. Finally, a conventional method is used to form another insulating layer over the exposed conductive layer in order to prevent direct contact with subsequently formed metallic contacts inside the opening.
REFERENCES:
patent: 5565372 (1996-10-01), Kim
patent: 5631179 (1997-05-01), Sung et al.
patent: 5899749 (1999-05-01), Becker et al.
patent: 5972804 (1999-10-01), Tobin et al.
Fu Kuan-Yu
Huang Lu-Shiang
Niebling John F.
Pompey Ron
United Microelectronics Corp.
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