Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-06-18
1998-02-03
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 349 42, 349139, H01L 2904
Patent
active
057147698
ABSTRACT:
The thin film transistor LCD includes, a plurality of gate lines each having a projection part formed spaced in a certain interval on a transparent substrate; a plurality of first data lines each formed covering one side of each of the projection parts of the gate lines for serving as drain electrodes; a plurality of second data lines each formed on the transparent substrate to cross the gate lines at a right angle to the gate lines in parts other than the projection parts but formed discrete so as to be intermittent to each other at parts crossing the gate lines; an insulation layer having at least one contact hole on each of the intermitted pieces of the second data lines formed on all over the surfaces of the first and the second data lines, the gate lines and the transparent substrate; and, a plurality of third data lines formed on the insulation layer to cover the other side of the projection parts and to connect the intermitted pieces of the second data lines through making contact with the contact holes for serving as source electrodes together with the second data lines.
Goldstar Co. Ltd.
Tran Minh-Loan
White John P.
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