Device manufacturing method, top coat material and substrate

Details Device manufacturing method, top coat material and substrate Device manufacturing method, top coat material and substrate

2004-12-28

2009-02-17

Ahmed, Sheeba (Department: 1794)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Reexamination Certificate

active

07491661

ABSTRACT:
In immersion lithography, to avoid internal reflections in the final element of the projection system, immersion fluid and topcoat, the thicknesses, dl, dtcand dr, and refractive indices, nl, ntcand nr, of the immersion fluid, topcoat and resist may meet the following criteria:in-line-formulae description="In-line Formulae" end="lead"?nl≦ntc≦nrin-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?dl>˜5.λin-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?dtc≦˜5.λin-line-formulae description="In-line Formulae" end="tail"?

REFERENCES:
patent: 3573975 (1971-04-01), Dhaka et al.
patent: 3648587 (1972-03-01), Stevens
patent: 4346164 (1982-08-01), Tabarelli et al.
patent: 4390273 (1983-06-01), Loebach et al.
patent: 4396705 (1983-08-01), Akeyama et al.
patent: 4480910 (1984-11-01), Takanashi et al.
patent: 4509852 (1985-04-01), Tabarelli et al.
patent: 5040020 (1991-08-01), Rauschenbach et al.
patent: 5121256 (1992-06-01), Corle et al.
patent: 5610683 (1997-03-01), Takahashi
patent: 5825043 (1998-10-01), Suwa
patent: 5900354 (1999-05-01), Batchelder
patent: 6191429 (2001-02-01), Suwa
patent: 6236634 (2001-05-01), Lee et al.
patent: 6600547 (2003-07-01), Watson et al.
patent: 6603130 (2003-08-01), Bisschops et al.
patent: 2002/0020821 (2002-02-01), Van Santen et al.
patent: 2002/0163629 (2002-11-01), Switkes et al.
patent: 2003/0123040 (2003-07-01), Almogy
patent: 2004/0000627 (2004-01-01), Schuster
patent: 2004/0075895 (2004-04-01), Lin
patent: 2004/0114117 (2004-06-01), Bleeker
patent: 2004/0136494 (2004-07-01), Lof et al.
patent: 2004/0160582 (2004-08-01), Lof et al.
patent: 2004/0165159 (2004-08-01), Lof et al.
patent: 2004/0207824 (2004-10-01), Lof et al.
patent: 2004/0211920 (2004-10-01), Derksen et al.
patent: 2004/0239954 (2004-12-01), Bischoff
patent: 2004/0263809 (2004-12-01), Nakano
patent: 2005/0007569 (2005-01-01), Streefkerk et al.
patent: 2005/0018155 (2005-01-01), Cox et al.
patent: 2005/0024609 (2005-02-01), De Smit et al.
patent: 2005/0030497 (2005-02-01), Nakamura
patent: 2005/0036184 (2005-02-01), Yeo et al.
patent: 2005/0042554 (2005-02-01), Diericks et al.
patent: 2005/0046813 (2005-03-01), Streefkerk et al.
patent: 2005/0046934 (2005-03-01), Ho et al.
patent: 2005/0052632 (2005-03-01), Miyajima
patent: 2005/0094116 (2005-05-01), Flagello et al.
patent: 2005/0094125 (2005-05-01), Arai
patent: 2005/0122505 (2005-06-01), Miyajima
patent: 2005/0132914 (2005-06-01), Mulkens et al.
patent: 2005/0134817 (2005-06-01), Nakamura
patent: 2005/0140948 (2005-06-01), Tokita
patent: 2005/0146693 (2005-07-01), Ohsaki
patent: 2005/0146694 (2005-07-01), Tokita
patent: 2005/0151942 (2005-07-01), Kawashima
patent: 2005/0200815 (2005-09-01), Akamatsu
patent: 2005/0213065 (2005-09-01), Kitaoka
patent: 2005/0213066 (2005-09-01), Sumiyoshi
patent: 2005/0219489 (2005-10-01), Nei et al.
patent: 2005/0233081 (2005-10-01), Tokita
patent: 206 607 (1984-02-01), None
patent: 221 563 (1985-04-01), None
patent: 224 448 (1985-07-01), None
patent: 242 880 (1987-02-01), None
patent: 0023231 (1981-02-01), None
patent: 0418427 (1991-03-01), None
patent: 1039511 (2000-09-01), None
patent: 2474708 (1981-07-01), None
patent: 58-202448 (1983-11-01), None
patent: 62-065326 (1987-03-01), None
patent: 62-121417 (1987-06-01), None
patent: 63-157419 (1988-06-01), None
patent: 04-305915 (1992-10-01), None
patent: 04-305917 (1992-10-01), None
patent: 06-124873 (1994-05-01), None
patent: 07-132262 (1995-05-01), None
patent: 07-220990 (1995-08-01), None
patent: 10-228661 (1998-08-01), None
patent: 10-255319 (1998-09-01), None
patent: 10-303114 (1998-11-01), None
patent: 10-340846 (1998-12-01), None
patent: 11-176727 (1999-07-01), None
patent: 2000-058436 (2000-02-01), None
patent: 2001-091849 (2001-04-01), None
patent: 2004-193252 (2004-07-01), None
patent: WO 99/49504 (1999-09-01), None
patent: WO 2004/053596 (2004-06-01), None
patent: WO 2004/053950 (2004-06-01), None
patent: WO 2004/053951 (2004-06-01), None
patent: WO 2004/053952 (2004-06-01), None
patent: WO 2004/053953 (2004-06-01), None
patent: WO 2004/053954 (2004-06-01), None
patent: WO 2004/053955 (2004-06-01), None
patent: WO 2004/053956 (2004-06-01), None
patent: WO 2004/053957 (2004-06-01), None
patent: WO 2004/053958 (2004-06-01), None
patent: WO 2004/053959 (2004-06-01), None
patent: WO 2004/055803 (2004-07-01), None
patent: WO 2004/057589 (2004-07-01), None
patent: WO 2004/057590 (2004-07-01), None
patent: WO 2004/090577 (2004-10-01), None
patent: WO 2004/090633 (2004-10-01), None
patent: WO 2004/090634 (2004-10-01), None
patent: WO 2004/092830 (2004-10-01), None
patent: WO 2004/092833 (2004-10-01), None
patent: WO 2004/093130 (2004-10-01), None
patent: WO 2004/093159 (2004-10-01), None
patent: WO 2004/093160 (2004-10-01), None
patent: WO 2004/095135 (2004-11-01), None
patent: WO 2005/010611 (2005-02-01), None
patent: WO 2005/024517 (2005-03-01), None
M. Switkes et al., “Immersion Lithography at 157 nm”, MIT Lincoln Lab, Orlando 2001-1, Dec. 17, 2001.
M. Switkes et al., “Immersion Lithography at 157 nm”, J. Vac. Sci. Technol. B., vol. 19, No. 6, Nov./Dec. 2001, pp. 2353-2356.
M. Switkes et al., “Immersion Lithography: Optics for the 50 nm Node”, 157 Anvers-1, Sep. 4, 2002.
B.J. Lin, “Drivers, Prospects and Challenges for Immersion Lithography”, TSMC, Inc., Sep. 2002.
B.J. Lin, “Proximity Printing Through Liquid”, IBM Technical Disclosure Bulletin, vol. 20, No. 11B, Apr. 1978, p. 4997.
B.J. Lin, “The Paths To Subhalf-Micrometer Optical Lithography”, SPIE vol. 922, Optical/Laser Microlithography (1988), pp. 256-269.
G.W.W. Stevens, “Reduction of Waste Resulting from Mask Defects”, Solid State Technology, Aug. 1978, vol. 21 008, pp. 68-72.
S. Owa et al., “Immersion Lithography; its potential performance and issues”, SPIE Microlithography 2003, 5040-186, Feb. 27, 2003.
S. Owa et al., “Advantage and Feasibility of Immersion Lithography”, Proc. SPIE 5040 (2003).
Nikon Precision Europe GmbH, “Investor Relations—Nikon's Real Solutions”, May 15, 2003.
H. Kawata et al., “Optical Projection Lithography using Lenses with Numerical Apertures Greater than Unity”, Microelectronic Engineering 9 (1989), pp. 31-36.
J.A. Hoffnagle et al., “Liquid Immersion Deep-Ultraviolet Interferometric Lithography”, J. Vac. Sci. Technol. B., vol. 17, No. 6, Nov./Dec. 1999, pp. 3306-3309.
B.W. Smith et al., “Immersion Optical Lithography at 193nm”, Future Fab International, vol. 15, Jul. 11, 2003.
H. Kawata et al., “Fabrication of 0.2μm Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens”, Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4174-4177.
G. Owen et al., “1/8μm Optical Lithography”, J. Vac. Sci. Technol. B., vol. 10, No. 6, Nov./Dec. 1992, pp. 3032-3036.
H. Hogan, “New Semiconductor Lithography Makes a Splash”, Photonics Spectra, Photonics TechnologyWorld, Oct. 2003 Edition, pp. 1-3.
S. Owa and N. Nagasaka, “Potential Performance and Feasibility of Immersion Lithography”, NGL Workshop 2003, Jul. 10, 2003, Slide Nos. 1-33.
S. Owa et al., “Update on 193nm immersion exposure tool”, Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-51.
H. Hata, “The Development of Immersion Exposure Tools”, Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-22.
T. Matsuyama et al., “Nikon Projection Lens Update”, SPIE Microlithography 2004, 5377-65, Mar. 2004.
“Depth-of-Focus Enhancement Using High Refractive Index Layer on the Imaging Layer”, IBM Technical Disclosure Bulletin, vol. 27, No. 11,, Apr. 1985, p. 6521.
A. Suzuki, “Lithography Advances on Multiple Fronts”, EEdesign, EE Times, Jan. 5, 2004.
B. Lin, The &

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