Device manufacturing method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S330000

Reexamination Certificate

active

07459264

ABSTRACT:
A device manufacturing method is disclosed, which includes forming a resist film on a substrate, preparing an exposure tool which comprises a projection optical system, preparing a photo mask on which a mask pattern is formed, mounting the substrate and the photo mask on the exposure tool, the substrate having the resist film formed thereon, transferring the mask pattern formed on the photo mask onto the resist film in a state in which a solution including an oxidative agent is filled between the resist film and a final element of a projection optical system to form a latent image of the mask pattern on the resist film, heating the resist film having the latent image formed thereon, and developing the heated resist film.

REFERENCES:
patent: 5715039 (1998-02-01), Fukuda et al.
patent: 5900354 (1999-05-01), Batchelder
patent: 2002/0163629 (2002-11-01), Switkes et al.
patent: 2004/0075895 (2004-04-01), Lin
patent: 2006/0028626 (2006-02-01), Chang et al.
patent: 2006/0132731 (2006-06-01), Jansen et al.
patent: 2007/0031755 (2007-02-01), Hirayama et al.
patent: 1751272 (2006-03-01), None
patent: 10-303114 (1998-11-01), None
patent: 10-340846 (1998-12-01), None
patent: 2004-335820 (2004-11-01), None
patent: 2004-335821 (2004-11-01), None
patent: 2004-363588 (2004-12-01), None
patent: 2005-019433 (2005-01-01), None
patent: 2005-079140 (2005-03-01), None
patent: 2005-079238 (2005-03-01), None
patent: 554422 (2003-09-01), None
patent: WO 99/49504 (1999-09-01), None
Smith et al., “Approaching the Numerical Aperture of Water-Immersion Lithography at 193nm”, Proceedings of SPIE, vol. 5377, pp. 273-284, (2004).
Notification for Filing Opinion in Examination from Taiwanese Patent Office dated Apr. 27, 2007, in counterpart foreign Application No.094123062 and English Language Translation thereof.
Office Action from China Patent Office mailed Jul. 6, 2007, in counterpart foreign Application No. 2005/100826421 and English Language Translation thereof.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device manufacturing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4045678

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.