Device lithography by selective ion implantation

Details Device lithography by selective ion implantation Device lithography by selective ion implantation

1981-05-22

1983-03-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156655, 1566591, 204192E, B44C 122, C03C 1500, C03C 2506

Patent

active

043774377

ABSTRACT:
A method is shown whereby implanted ions, for example indium or gallium ions, are used to selectively define a pattern on a material, typically a polymer. The implanted regions react with a plasma (for example, an oxygen plasma) to form a patterned, nonvolatile protective layer (e.g., indium oxide or gallium oxide) on the material. Subsequent etching, which can typically be accomplished by the same plasma, produces a negative tone pattern. Materials other than polymers can be utilized. For example, an indium implant in SiO.sub.2 allows direct pattern generation by exposure to a fluorine plasma, without the use of a separate polymeric resist.

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patent: 4307178 (1981-12-01), Kaplan et al.
Sacher Technik Wien, Jun. 1979, Ion-Projection-System for IC Production by G. Stengl et al., pp. 1-45.
Polymer Engineering and Science, vol. 20, No. 16, Mid-Nov. 1980, Oxygen Plasma Removal of Thin Polymer Films by G. N. Taylor et al., pp. 1087-1092.
Japanese Journal of Applied Physics, vol. 19, No. 10, Oct. 1980, Dry Development of Resists Exposed to Focused Gallium Ion Beam by Hiroki Kuwano et al., pp. L 615-L 617.
Journal of the Electrochemical Society, Oct. 1979, Rever Etching of Chromium Film in Gas Plasma by Teruhiko Yamazaki et al. pp. 1794-1798.
Japanese Journal of Applied Physics, vol. 19, No. 7, Jul. 1980, The Role of a Photoresist Film on Reverse Gas Plasma Etching of Chromium Films by Teruhiko Yamazaki et al., pp. 1371-1376.
Journal of Vacuum Science Technology, vol. 17(6), Nov./Dec. 1980, Gas Plasma Etching of Ion Implanted Chromium Films by T. Yamazaki et al., pp. 1348-1350.

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