Device isolation layer for a semiconductor device

Details Device isolation layer for a semiconductor device Device isolation layer for a semiconductor device

1998-02-11

1999-12-28

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257509, H01L 2358

Patent

active

060085266

ABSTRACT:
A field oxide layer for a semiconductor device includes an upper portion of first thickness extending above the major surface of a semiconductor substrate, and a lower portion of second thickness extending below the major surface of the semiconductor substrate. The ratio of first thickness to second thickness is not less than 1 to 2.

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patent: 5393693 (1995-02-01), Ko et al.
patent: 5445989 (1995-08-01), Lur et al.
patent: 5498566 (1996-03-01), Lee
IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985, pp. 6703.

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