Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-07-19
2011-07-19
Chu, Chris (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE51040, C257S741000, C977S742000, C438S610000
Reexamination Certificate
active
07982318
ABSTRACT:
A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.
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Byun Kyung-Rae
Choi Young-Moon
Heo Jang-Eun
Lee Sun-Woo
Yoon Hong-Sik
Chu Chris
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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