Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor
Reexamination Certificate
2011-03-15
2011-03-15
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Polycrystalline semiconductor
C438S104000, C438S150000, C438S166000, C438S198000, C257S043000, C257S064000, C257S066000, C257SE29004
Reexamination Certificate
active
07906415
ABSTRACT:
An electronic device including: (a) a semiconductor layer including crystalline zinc oxide; and (b) an electrode including a suitable amount of zinc, indium, or a mixture thereof.
REFERENCES:
patent: 3728008 (1973-04-01), Allan et al.
patent: 5699035 (1997-12-01), Ito et al.
patent: 5892244 (1999-04-01), Tanaka et al.
patent: 6291258 (2001-09-01), Kadota
patent: 6673478 (2004-01-01), Kato et al.
patent: 7145174 (2006-12-01), Chiang et al.
patent: 7192802 (2007-03-01), Stecker et al.
patent: 7223641 (2007-05-01), Maekawa
patent: 7285501 (2007-10-01), Mardilovich et al.
patent: 2003/0214229 (2003-11-01), Holman
patent: 2004/0023432 (2004-02-01), Haga
patent: 2005/0150773 (2005-07-01), Yamada et al.
patent: 2007/0287221 (2007-12-01), Ong et al.
patent: WO 99/50889 (1999-10-01), None
E. Fortunato et al., “Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature,”Adv. Mater., vol. 17, No. 5, pp. 590-594 (Mar. 8, 2005).
T. E. Park et al., “Structural and Optical Properties of ZnO Thin Films Grown by RF Magnetron Sputtering on Si Substrates,”J. Korean Phys. Soc., vol. 45, pp. S697-S700 (Dec. 2004).
B. J. Norris et al., “Spin coated zinc oxide transparent transistors,”J. Phys. D: Appl. Phys., vol. 36, pp. L105-L107 (2003).
B. Sun et al., “Solution-Processed Zinc Oxide Field-Effect Transistors Based on Self-Assembly of Colloidal Nanorods,”Nano Lett., vol. 5, No. 12, pp. 2408-2413 (2005).
Y. Takahashi et al, “Photoconductivity of Ultrathin Zinc Oxide Films,”Jpn. J. Appl. Phys., vol. 33, pp. 6611-6615 (1994).
D. Bao et al., “Sol-gel derived c-axis oriented ZnO thin films,”Thin Solid Films, vol. 312, pp. 37-39 (1998).
M. Ohyama et al., “Preparation of ZnO Films with Preferential Orientation by Sol-Gel Method,”J. Cer. Soc. Jpn., vol. 104, pp. 296-300 (1996).
S. Fujihara et al., “Crystallization behavior and origin of c-axis orientation in sol-gel-derived ZnO:Li thin films on glass substrates,”Appl. Sur. Sci., vol. 180, pp. 341-350 (2001).
K. Nishio et al., “Preparation of highly oriented thin film exhibiting transparent conduction by the sol-gel process,”J. Mater. Sci., vol. 31, pp. 3651-3656 (1996).
Li Yuning
Ong Beng S.
Fay Sharpe LLP
Landau Matthew C
Snow Colleen E
Soong Zosan S.
Xerox Corporation
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