Device having reduced diffusion through ferromagnetic materials

Details Device having reduced diffusion through ferromagnetic materials Device having reduced diffusion through ferromagnetic materials

2005-04-19

2005-04-19

Lebentritt, Michael (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000

Reexamination Certificate

active

06881993

ABSTRACT:
A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the antiferromagnetic layer. Diffusion of the mobile atoms is inhibited by an oxide layer provided between the anti-ferromagnetic layer and the ferromagnetic layer. Alternatively, the ferromagnetic layer can have boron atoms located on or in the layer to fill interstices.

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