Device having enhanced stress state and related methods

Details Device having enhanced stress state and related methods Device having enhanced stress state and related methods

2004-12-10

2008-03-25

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27062

Reexamination Certificate

active

07348635

ABSTRACT:
The present invention provides a semiconductor device having dual nitride liners, which provide an increased transverse stress state for at least one FET and methods for the manufacture of such a device. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a first silicon nitride liner to the device and applying a second silicon nitride liner adjacent the first silicon nitride liner, wherein at least one of the first and second silicon nitride liners induces a transverse stress in a silicon channel beneath at least one of the first and second silicon nitride liner.

REFERENCES:
patent: 6876053 (2005-04-01), Ma et al.
patent: 2004/0029323 (2004-02-01), Shimizu et al.
patent: WO0243151 (2002-05-01), None

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