Device having dual etch stop liner and reformed silicide...

Details Device having dual etch stop liner and reformed silicide... Device having dual etch stop liner and reformed silicide...

2004-12-10

2008-11-04

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S655000, C438S682000

Reexamination Certificate

active

07446062

ABSTRACT:
The present invention provides a semiconductor device having dual silicon nitride liners and a reformed silicide layer and related methods for the manufacture of such a device. The reformed silicide layer has a thickness and resistance substantially similar to a silicide layer not exposed to the formation of the dual silicon nitride liners. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a first silicon nitride liner to a silicide layer, removing a portion of the first silicon nitride liner, reforming a portion of the silicide layer removed during the removal step, and applying a second silicon nitride liner to the silicide layer.

REFERENCES:
patent: 4316209 (1982-02-01), Ho et al.
patent: 5972785 (1999-10-01), Shishiguchi et al.
patent: 7052946 (2006-05-01), Chen et al.
patent: 2006/0121665 (2006-06-01), Fang et al.

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