Device having dielectric thin film

Static information storage and retrieval – Systems using particular element – Capacitors

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365145, 257306, G11C 1124

Patent

active

054425859

ABSTRACT:
According to the present invention, there is provided a device having dielectric thin film comprising an impurity-containing first electrode having a perovskite-type crystal structure and made of the first dielectric material, a dielectric thin film made of the second dielectric material epitaxially deposited on the surface of the first electrode, and the second electrode provided on the surface of the dielectric thin film.

REFERENCES:
patent: 5155658 (1992-10-01), Inam et al.
patent: 5208479 (1993-05-01), Mathews et al.
Applied Physics Lett. pp. 753-755, 58, 753 (1991) D. K. Chin, et al., Feb. 18, 1991.
Japanese Journal of Applied Physics pp. 2210-2212, 28, L22109 (1989); Haruhiro Hasegawa, et al., Dec., 1989.
Japanese Journal of Applied Physics pp. 4976-4981, 70, 4976 (1991); Yoshida et al.; Nov. 1, 1991.

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