Device having capacitor and its manufacture

Details Device having capacitor and its manufacture Device having capacitor and its manufacture

2005-09-13

2005-09-13

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S532000, C438S003000

Reexamination Certificate

active

06943397

ABSTRACT:
A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.

REFERENCES:
patent: 5798903 (1998-08-01), Dhote et al.
patent: 6060735 (2000-05-01), Izuha et al.
patent: 6841817 (2005-01-01), Kurasawa et al.
patent: 2002/0015852 (2002-02-01), Noguchi et al.
patent: 9-245525 (1997-09-01), None
J.F. Scott, et al.;Quantitative measurement of space-charge effects in lead zirconate-titanate memories; Journal of Applied Physics, vol. 70, No. 1, Jul. 1, 1991, pp. 382-388 (Discussed on page 2 of specification).

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