Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-28
1998-08-04
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257362, 257566, H01L 2362
Patent
active
057897859
ABSTRACT:
A device for protecting an integrated circuit against electrostatic discharges, and adapted for connection between a terminal and a ground of the integrated circuit, which includes a first transistor (Q2) connected between that terminal and ground by its emitter terminal and collector terminal, respectively, and a second transistor (Q1) which has its base terminal connected to the base terminal of the first transistor. The emitter and collector terminals of the second transistor (Q2) are connected to the collector of the first transistor (Q1).
REFERENCES:
patent: 4100561 (1978-07-01), Ollendorf
patent: 4811155 (1989-03-01), Kuriyama et al.
patent: 5528064 (1996-06-01), Thiel et al.
patent: 5539327 (1996-07-01), Shigehara et al.
patent: 5545914 (1996-08-01), Kumano
Patent Abstracts of Japan, vol. 017 No. 504 (E-1430), 10 Sep. 1993, & JP-A-05 129530 (Toshiba Corp.) 25 May 1993.
Patent Abstracts of Japan, vol. 014 No. 557 (E-111), 11 Dec. 1990, & JP-A-02 240959 (Toshiba Corp.; Others:01), 25 Sep. 1990.
Martignoni Fabrizio
Ravanelli Enrico Maria Alfonso
Carlson David V.
Ngo Ngan V.
SGS--Thomson Microelectronics S.r.l.
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