Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2000-02-01
2003-04-08
Lund, Jeffrie R. (Department: 1763)
Coating apparatus
Gas or vapor deposition
With treating means
C156S345410, C118S718000
Reexamination Certificate
active
06543380
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to the production of a homogenous plasma. More specifically, the present invention relates to a device that uses microwaves for the production of homogenous plasma.
2. Description of the Prior Art
Various types of plasmas are generated using a wide variety of methods and devices. Plasma treatment is used, for example, for coating, cleaning, modifying and etching substrates, for treating medical implants, for inverting gases and in technology for purifying waste gases. The geometry of the workpieces to be treated ranges from flat substrates, fibers and webs, to any configuration of shaped articles. The size of the plasma chamber, and thus of the workpieces is limited. Materials in web form and fiber bundles can be processed only with difficulty.
Known devices have, for example, outer rings which can be constructed as a resonator. To feed the microwaves, use is made, inter alia, of waveguides and coaxial cables and, inter alia, of antennas, for example slots, as coupling points in the wall of the plasma chamber.
A disadvantage of the known devices are the formations of inhomogeneities in the in the plasma, particularly at high pressures and in relatively large plasma chambers and/or substrates.
The task therefore existed of generating a homogenous plasma and rendering possible homogenous plasma treatment.
SUMMARY OF THE INVENTION
It is proposed according to the invention to introduce the microwaves homogenously into the plasma chamber serving the purpose of processing via a cylindrical chamber and via coupling points in the cylindrical wall of this chamber. The plasma chamber is then to be constructed on the outside completely or partially covering the cylindrical wall of the chamber.
REFERENCES:
patent: 3373357 (1968-03-01), Keenan et al.
patent: 4795113 (1989-01-01), Minovitch
patent: 5015349 (1991-05-01), Suib et al.
patent: 5131993 (1992-07-01), Suib et al.
patent: 5466295 (1995-11-01), Getty
patent: 5611864 (1997-03-01), Kimura et al.
patent: 5629054 (1997-05-01), Kanai
patent: 5838108 (1998-11-01), Frank et al.
patent: 6044661 (2000-04-01), Pfister et al.
patent: 6096389 (2000-08-01), Kanai
patent: 6175183 (2001-01-01), Liehr
patent: 6242053 (2001-06-01), Anderie et al.
patent: 19608949 (1997-09-01), None
patent: 0 335 675 (1989-10-01), None
patent: 0 564 359 (1993-10-01), None
patent: 56 136646 (1981-10-01), None
patent: WO 9621751 (1996-07-01), None
B.E. Gilchrist et al, “Flexible microwave system to measure the electron number density and quantify the communications impact of electric thruster plasma plumes”, Rev. Sci. Instrum. 68 (2), Feb. 1997, pp. 1189-1194.*
T.L. Rhodes et al, “DIII-D divertor reflectometer system”, Rev. Sci. Instrum. 68 (1), Jan. 1997, pp. 447-449.*
P.J.Matsuo et al, “Roles of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon”, J. Vac. Sci. Technol. A 15(4), Jul./Aug. 1997, pp. 1801-1813.
Hochberg D. Peter
Lund Jeffrie R.
Mellino Sean
Vieyra Katherine R.
Zervigon Rudy
LandOfFree
Device for the production of homogenous microwave plasma does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device for the production of homogenous microwave plasma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for the production of homogenous microwave plasma will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3064315