Device for protection after a page-write operation in an electri

Static information storage and retrieval – Floating gate – Data security

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36518512, 365236, 3652385, G11C 1604

Patent

active

058620753

ABSTRACT:
A FLASH memory is compatible with a standard EEPROM memory in terms of a write-by-page instruction with write protection. A circuit successively addresses one of the columns of a storage matrix in order to write a page previously stored in buffers, and the circuit addresses the writing of a protection bit after the writing of the page.

REFERENCES:
patent: 5097445 (1992-03-01), Yamauchi
patent: 5363330 (1994-11-01), Kobayashi et al.
patent: 5363334 (1994-11-01), Alexander et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5621692 (1997-04-01), Lin
patent: 5696732 (1997-12-01), Zagar et al.
Zitlaw, C., 8080 Wescon Conference Record, "Recent Trends in Embedded Control Memory", (Nov. 1991), pp. 386-389.

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