Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2005-04-05
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000, C257S351000
Reexamination Certificate
active
06876036
ABSTRACT:
The inherent capacitance between the substrate and the drain of an SOI device is utilized as part of a circuit. The substrate is connected to a sensing pin brought external to the chip, and other electronic components are hooked up to form a circuit that includes and operates with the inherent capacitance between the substrate and the drain.
REFERENCES:
patent: 5686735 (1997-11-01), Sim
Koninklijke Philips Electronics , N.V.
Tran Thien F
Waxler Aaron
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