Device for measuring parameters of an electronic device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S350000, C257S351000

Reexamination Certificate

active

06876036

ABSTRACT:
The inherent capacitance between the substrate and the drain of an SOI device is utilized as part of a circuit. The substrate is connected to a sensing pin brought external to the chip, and other electronic components are hooked up to form a circuit that includes and operates with the inherent capacitance between the substrate and the drain.

REFERENCES:
patent: 5686735 (1997-11-01), Sim

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