Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-01-10
2006-01-10
Mai, Son (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S202000, C365S203000
Reexamination Certificate
active
06985393
ABSTRACT:
A margin test on a Dynamic Random Access Memory (DRAM) in accordance with the invention begins with a supply voltage level being stored in all memory cells of the DRAM. Circuitry incorporated into each sense amplifier of the DRAM then isolates the digit line equilibrating circuitry in each sense amplifier from the cell plate voltage DVC2or supply voltage VCCto which the equilibrating circuitry is normally connected and connects the equilibrating circuitry to ground instead.
REFERENCES:
patent: 5208778 (1993-05-01), Kumanoya
patent: 5265056 (1993-11-01), Butler
patent: 5297087 (1994-03-01), Porter
patent: 5500824 (1996-03-01), Fink
patent: 5523977 (1996-06-01), Tobita et al.
patent: 5544108 (1996-08-01), Thomann
patent: 5610867 (1997-03-01), DeBrosse
patent: 5710740 (1998-01-01), Manning
patent: 5754486 (1998-05-01), Nevill et al.
patent: 5822258 (1998-10-01), Casper
patent: 5877993 (1999-03-01), Biegel et al.
patent: 5903502 (1999-05-01), Porter
patent: 5959913 (1999-09-01), Raad
patent: 5982682 (1999-11-01), Nevill et al.
patent: 6002622 (1999-12-01), Dean
patent: 6055199 (2000-04-01), Hamade et al.
patent: 6061285 (2000-05-01), Tsukikawa
patent: 6088819 (2000-07-01), Adachi et al.
patent: 6101139 (2000-08-01), Dean
patent: 6154401 (2000-11-01), Casper et al.
patent: 6256242 (2001-07-01), Dean
patent: 6266287 (2001-07-01), Porter
patent: 6327201 (2001-12-01), Dean
patent: 6442086 (2002-08-01), Dean
patent: 6801469 (2004-10-01), Cowles
Prince, B., “Semiconductor Memories: A Handbook of Design, Manufacture and Application,” (Wiley 1991, reprinted 1996).
Mai Son
Micro)n Technology, Inc.
TraskBritt
LandOfFree
Device for margin testing a semiconductor memory by applying... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device for margin testing a semiconductor memory by applying..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for margin testing a semiconductor memory by applying... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3580141