Device for inhibiting hydrogen damage in ferroelectric...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S296000

Reexamination Certificate

active

07071506

ABSTRACT:
A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.

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patent: 2003/0136989 (2003-07-01), Amiotti et al.
patent: 2003/0234412 (2003-12-01), Yamanobe
patent: 2004/0057193 (2004-03-01), Moon et al.
patent: 411087633 (1999-03-01), None

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