Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-26
2008-10-14
Ngo, Ngan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257SE27016
Reexamination Certificate
active
07436031
ABSTRACT:
A semiconductor device according to this invention includes: two level shift switches (28A and28B) each having first and second electrodes, a control electrode, a signal output electrode, and a first semiconductor region forming a transistor device section (28a,28b) which intervenes between the first electrode and the signal output electrode and is brought into or out of conduction according to a signal inputted to the control electrode and a resistor device section (Ra,Rb) which intervenes between the signal output electrode and the second electrode, the first semiconductor region comprising a wide bandgap semiconductor; and a diode (23) having a cathode-side electrode, an anode-side electrode, and a second semiconductor region comprising a wide bandgap semiconductor.
REFERENCES:
patent: 5351182 (1994-09-01), Miyazaki et al.
patent: 5502412 (1996-03-01), Choi et al.
patent: 2002/0131287 (2002-09-01), Majumdar et al.
patent: 2003/0006415 (2003-01-01), Yokogawa et al.
patent: 2003/0048116 (2003-03-01), Suetsugu
patent: 2006/0033480 (2006-02-01), Soldano
patent: 08-335863 (1996-12-01), None
patent: 2002-093920 (2002-03-01), None
patent: 2002-203966 (2002-07-01), None
patent: 2003-079131 (2003-03-01), None
patent: 2003-228320 (2003-08-01), None
patent: WO 97/01209 (1997-01-01), None
European Search Report, issued in Corresponding European Patent Application No. 05775056.4-1242, dated on Jul. 24, 2007.
European Office Action, issued in Corresponding European Patent Application No. 05775056.4-1242, dated on Oct. 12, 2007.
Hashimoto Koichi
Kitabatake Makoto
Kusumoto Osamu
Miyanaga Ryoko
Takahashi Kunimasa
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Ngo Ngan
LandOfFree
Device for implementing an inverter having a reduced size does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device for implementing an inverter having a reduced size, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for implementing an inverter having a reduced size will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3988669