Device for implementing an inverter having a reduced size

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S368000, C257SE27016

Reexamination Certificate

active

07436031

ABSTRACT:
A semiconductor device according to this invention includes: two level shift switches (28A and28B) each having first and second electrodes, a control electrode, a signal output electrode, and a first semiconductor region forming a transistor device section (28a,28b) which intervenes between the first electrode and the signal output electrode and is brought into or out of conduction according to a signal inputted to the control electrode and a resistor device section (Ra,Rb) which intervenes between the signal output electrode and the second electrode, the first semiconductor region comprising a wide bandgap semiconductor; and a diode (23) having a cathode-side electrode, an anode-side electrode, and a second semiconductor region comprising a wide bandgap semiconductor.

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European Search Report, issued in Corresponding European Patent Application No. 05775056.4-1242, dated on Jul. 24, 2007.
European Office Action, issued in Corresponding European Patent Application No. 05775056.4-1242, dated on Oct. 12, 2007.

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