Coating apparatus – Gas or vapor deposition – With treating means
Patent
1997-10-28
2000-03-21
Lund, Jeffrie R
Coating apparatus
Gas or vapor deposition
With treating means
118715, 117951, C23C 1600, C30B 2936
Patent
active
060398124
ABSTRACT:
A device for epitaxially growing objects of for instance SiC by Chemical Vapor Deposition on a substrate has a first conduit (24) arranged to conduct substantially only a carrier gas to a room (18) receiving the substrate and a second conduit (25) received in the first conduit, having a smaller cross-section than the first conduit and extending in the longitudinal direction of the first conduit with a circumferential space separating it from inner walls of the first conduit. The second conduit is adapted to conduct substantially the entire flow of reactive gases and it ends as seen in the direction of the flows, and emerges into the first conduit at a distance from said room.
REFERENCES:
patent: 4147571 (1979-04-01), Stringfellow et al.
patent: 4508054 (1985-04-01), Baumberger et al.
patent: 4533410 (1985-08-01), Ogura et al.
patent: 4748135 (1988-05-01), Frijlink
patent: 4751192 (1988-06-01), Hirooka et al.
patent: 4798166 (1989-01-01), Hirooka et al.
patent: 4866005 (1989-09-01), Davis et al.
patent: 4989541 (1991-02-01), Mikoshiba et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5256205 (1993-10-01), Schmitt
patent: 5322568 (1994-06-01), Ishihara et al.
patent: 5343938 (1994-09-01), Schmidt
patent: 5704985 (1998-01-01), Kordina et al.
Kordina Et Al., High Temperature Chemical Vapor Deposition of SiC, Technical Digest of International Conference on SiC and Related Materials-ICSCRM-95, Kyoto, Japan, 1995.
Kordina Et Al., High Temperature Chemical Vapor Deposition of SiC, Appl. Phys. Lett. 69(10), Sep. 2, 1996.
Ellison Alex
Gu Chun-Yuan
Hallin Christer
Janzen Erik
Kordina Olle
ABB Research Ltd.
Lund Jeffrie R
Okmetic Ltd.
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