Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1995-10-16
2000-04-11
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117 90, 118715, C30C 3500
Patent
active
060483989
ABSTRACT:
In a method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof on a substrate (13) received in a susceptor (7) having circumferential walls (8) these walls and by that the substrate and a source material (24) for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably. The carrier gas flow is fed into the susceptor towards the substrate for carrying said source material to the substrate for said growth. At least a part of said source material for said growth is added to the carrier gas flow upstream the susceptor (7) and carried by the carrier gas flow to the susceptor in one of a) a solid state and b) a liquid state for being brought to a vapor state in a container comprising said susceptor by said heating and carried in a vapor state to said substrate for said growth.
REFERENCES:
Kordina et al., A novel hot-wall CVD reactor for SiC epitaxy, Inst. Phys. Conf. Ser. No. 137, Chapter 1, pp. 44-44 (Paper presented at the 5th SiC and Related Materials Conf., Washington, DC 1993.
Kordina et al., Technical Digest of International Conference on SiC and Related Materials--95, Kyoto, Japan 1995. High Temperature Chemical Vapour Deposition.
Kordina et al., Growth and Characterisation of Silicon Carbide Power Device Material, Paper I, pp. 47-59, Linkoping Studies in Science and Technology, Dissertations No. 352, Department of Physics and Measurement Technology, Linkoping University, Sweden 1994.
Hallin Christer
Janzen Erik
Kordina Olle
Tuominen Marko
Vehanen Asko Erkki
ABB Research Ltd.
Garrett Felisa
Okmetic Ltd.
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