Device for driving a memory cell of a memory module by means...

Details Device for driving a memory cell of a memory module by means... Device for driving a memory cell of a memory module by means...

2006-03-14

2006-03-14

Ho, Hoai (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S149000, C365S233100, C327S390000

Reexamination Certificate

active

07012843

ABSTRACT:
A device for driving a memory cell (601) of a memory module which can be operated with an external voltage (VEXT) and an operating frequency (fCLK), whereas the memory cell (601) has a capacitance (600) for storing charges and a transistor (602) for reading charges from the capacitance (600) and for writing charges to the capacitance (600), which transistor can be controlled with a control voltage (VPP), which has a charge store (614) for supplying a control voltage (VPP) which is greater than the external voltage (VEXT). The charge store (614) being able to be charged by the external voltage (VEXT), and the charging of the charge store (614) is able to be controlled by a charging control frequency (fCC) derived from the operating frequency (fCLK) of the memory module.

REFERENCES:
patent: 6396324 (2002-05-01), Hsu et al.
patent: 6519191 (2003-02-01), Morishita
patent: 6584032 (2003-06-01), Fujioka et al.

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