Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-19
2011-07-19
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE31054, C977S834000, C977S938000, C977S954000
Reexamination Certificate
active
07982251
ABSTRACT:
The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ∈, which satisfy ∈r>0.2 nm*1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.
REFERENCES:
patent: 6992322 (2006-01-01), Narayan
patent: 2006/0132461 (2006-06-01), Furukawa et al.
patent: 2 873 493 (2006-01-01), None
patent: WO 2005078770 (2005-08-01), None
International Search Report and Written Opinion for PCT/FR2007/000432 filed Mar. 13, 2007.
Star A. et al.: “Nanotube Optoelectronic Memory Devices”; Nano Letters; vol. 4, No. 9, Sep. 2004; pp. 1587-1591, XP002414852.
Appenzeller J et al.: “Carbon nanotubes as potential building blocks for future nanoelectronics”; Microelectronic Engineering, Elsevier Publishers BV., Amsterdam, NL, vol. 64, No. 1-4; Oct. 2002; pp. 391-397; XP004381209.
Freitage M et al.: “Photoconductivity of Single Carbon Nanotubes”; Nano Letters, ACS, Washington, DC; vol. 3 No. 8; Jun. 2003; pp. 1067-1071; XP008043676.
Cui J B et al.: “Carbon Nanotube Memory Devices of High Charge Storage Stability”; Applied Physics Letters, AIP, American Institute of Physics, Mellville, NY, US; vol. 81, No. 17; Oct. 21, 2002; pp. 3260-3262; XP012032285.
Balasubramanian Kannan et al.: “Photoelectronic Transport Imaging of Individual Semiconducting Carbon Nanotubes”; Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US; vol. 84, No. 13; Mar. 29, 2004; pp. 2400-2402, XP012060945.
Steuerman D W et al.: “Interactions Between Conjugated Polymers and Single-Walled Carbon Nanotubes”; Journal of Physical Chemistry. B Materials, Surfaces, Interfaces and Biophysical, Washington, DC, US; vol. 106, No. 12; Mar. 28, 2002; pp. 3124-3130.
Winds S J et al.: “Carbon Nanotube Devices for Future Nanoelectronics”; Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on Aug. 12-14, 2003, Piscataway, NJ, USA; pp. 236-239; XP010658014.
Borghetti Julien
Bourgoin Jean-Philippe
Derycke Vincent
Alston & Bird LLP
Commissariat a l''Energie Atomique
Kuo W. Wendy
Sandvik Benjamin P
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