Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1999-02-19
2000-10-03
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117 14, 117202, C30B 3500
Patent
active
061267457
ABSTRACT:
A device for controlling crystal growth processes which run through various process phases, for instance, melting or cool-down, and in which the shape of the crystal has different areas during growth, for instance, a neck and/or a shoulder. Certain process parameters and target values, as well as input values and output values, for instance, a certain gas pressure or a certain rotational speed, are also associated with each of these areas and phases. The linking of these parameters is accomplished by function generators or tables. With the aid of the control device, it is made possible to generate a specially adapted linking of the respectively necessary input and output parameters for each of the special process phases and crystal sections with an essentially uniform construction and a comprehensible structure. This permits an optimized process operation with high reproducibility, in which manual interventions by the operating personnel during the entire process and also during the transition phases between different process steps are not necessary.
Altekruger Burkhard
Aufreiter Joachim
Bruss Dieter
Kalkowski Klaus
Hiteshew Felisa
Leybold Systems GmbH
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