Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment
Reexamination Certificate
2004-03-12
2011-10-25
Kornakov, Michael (Department: 1714)
Cleaning and liquid contact with solids
Processes
Hollow work, internal surface treatment
C134S001100, C156S345250
Reexamination Certificate
active
08043438
ABSTRACT:
An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2or Si3N4stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.
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Abe Kaoru
Kameda Kenji
Murata Hitoshi
Okura Seiji
Sakai Katsuo
Canon Anelva Corporation
Fujitsu Semiconductor Limited
Golightly Eric
Hitachi Kokusai Electric Inc.
Kornakov Michael
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