Device for biasing an RF device operating in quasi-linear modes

Details Device for biasing an RF device operating in quasi-linear modes Device for biasing an RF device operating in quasi-linear modes

1992-12-29

1994-10-18

Wambach, Margaret R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307491, 307546, 307264, 307310, H03K 1716

Patent

active

053571487

ABSTRACT:
A biasing device for actively biasing the base of an RF device operating in quasi-linear modes. The biasing device provides a source of low-impedance current and high current capability. The biasing device includes three transistors, each having a base, collector and emitter and one low turn-on diode. The first and second transistors are connected such that changes in the base-emitter voltage of the biased RF device can be detected. The third transistor is configured in a Darlington configuration with the first transistor in order to provide (1) increased sensitivity to voltage changes detected by the second transistor and (2) additional collector voltage for the second transistor to prevent it from operating in saturation. The low turn-on diode is a compensating diode which thermally tracks and compensates for operating changes in the second transistor due to temperature.

REFERENCES:
patent: 3501710 (1970-03-01), Liepins et al.
patent: 3984783 (1976-10-01), Bickley
patent: 4924194 (1990-05-01), Opas et al.
patent: 5218238 (1993-06-01), Nonaka et al.
Motorola Device Catalog, "RF Device Data", vol. I, DL110 Rev. 4, pp. 2-1166, 2-1210, 2-1214 (Feb. 3, 1991).
Helge Granberg, "Biasing Solid State Amplifiers to Linear Operation", RF amplifiers, pp. 72-76, Apr. 1991.

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