Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-11-19
2000-03-07
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
156345, 216 83, 216 93, 438745, H01L 2100
Patent
active
060339896
ABSTRACT:
A device for concentrating chemical substances for use during the fabrication of a semiconductor device uses a sample container for holding chemical substances. A feed tube in gas flow communication with the sample container introduces a carrier gas. A vapor outlet in gas flow communication with the sample container discharges a mixture of a vapor and the carrier gas. A sample heater, disposed above and apart from the sample container, heats the chemical substances to a first predetermined temperature. A gas source supplies the carrier gas, and a gas heater, in gas flow communication with both the gas source and the feed tube, heats the carrier gas to a second predetermined temperature. A condenser in flow communication with the vapor outlet produces a liquid from the vapor, and a collecting container collects the liquid.
REFERENCES:
Veillon et al., "Preparation of High-Purity Volatile Acids and Bases by Isothermal Distillation", Anal. Chem. vol. 53, pp. 549-550 (1981).
(Tile/Author unknown), Anal. Chem. vol. 44, No. 9, pp. 1716 (1972).
Dabeka et al., "Polypropylene for the Sub-Boiling Distillation and Storage of High-Purity Acids and Water", Anal. Chem. vol. 44, No. 8, pp. 1203-1207 (1976).
Kuehner et al., "Production and Analysis of Special High-Purity Acids Purified by Sub-Boiling Distillation", Anal. Chem. vol. 44, No. 12, pp. 2050-2056 (1972).
Her Yong-woo
Lee Mi-kyung
Lim Heoung-bin
Son Byoung-woo
Powell William
Samsung Electronics Co,. Ltd.
Volentine, LLP Jones
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