Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-11
2005-10-11
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C257S355000, C257S356000
Reexamination Certificate
active
06953971
ABSTRACT:
A device for adjusting an integrated circuit before encapsulation includes a first MOS transistor having a gate and a source connected together, and a body connected to a voltage reference. A first resistor is connected in parallel with the first MOS transistor. A second MOS transistor is connected in series with the first MOS transistor. The second MOS transistor has a gate and a source connected together, and a body connected to the voltage reference. A second resistor is connected in parallel with the second MOS transistor. A first terminal is connected to the source of the first MOS transistor, and a second terminal is connected to the source of the second MOS transistor. The first terminal is accessible externally after the integrated circuit has been encapsulated.
REFERENCES:
patent: 2795557 (2000-12-01), None
Laville Sébastien
Pontarollo Serge
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Loke Steven
STMircoelectronics SA
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